q?v~zy??q?v?_ra]?qcabdq HFS13N50U 2 1 3 bv dss = 500 v r ds(on) typ = 0.39
i d =13a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 34 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested features HFS13N50U 500v n-channel mosfet 1.gate 2. drain 3. source to-220f absolute maximum ratings t c =25 e unless otherwise specified symbol parameter value units v dss drain-source voltage 500 v i d drain current ? continuous (t c = 25 e ) 13 * a drain current ? continuous (t c = 100 e ) 8.2 * a i dm drain current ? pulsed (note 1) 52 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 580 mj i ar avalanche current (note 1) 13 a e ar repetitive avalanche energy (note 1) 4.1 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 41 w 0.33 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 3.05 e /w r ja junction-to-ambient -- 62.5 * drain current limited by maximum junction temperature nov 2013
q?v~zy??q?v?_ra]?qcabdq HFS13N50U notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=6.2mh, i as =13a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |